17 November 2015
SCI's London Group in partnership with UCL's Chemical & Physical Society
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The transition from rotating electronic memory media to solid state silicon memory is now well advanced. Even as that happens silicon itself continues to be challenged for its nanometre size memory crown.
Ron Neale, with a 50 years experience as a researcher, developer, writer, outspoken critic and the holder of more than 10 patents in the area of solid state memory will explore the materials, mechanisms and the various levels of success of the many challengers.
Where changes in phase, structural and electrochemical changes, quantum effects and artificial materials are used to produce the two or many data states required for the atomic sized cells in the memory arrays of the future. The presentation will give those attending a guide to what it will take for the challengers to succeed and the timing.
The lecture will be preceded by tea/coffee in the Nyholm room and followed by a Mixer in the Nyholm Room.
Department of Chemistry
University College London
20 Gordon Street
London, WC1H 0AJ
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SCI Comms Team
Tel: +44 (0) 20 7598 1594
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